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| PartNumber | TC58BYG0S3HBAI6 | TC58BYG0S3HBAI4 | TC58BVG2S0HTAI0 |
| Description | NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) | NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) | NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM) |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | NAND Flash | NAND Flash | NAND Flash |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | VFBGA-67 | TFBGA-63 | TSOP-48 |
| Memory Size | 1 Gbit | 1 Gbit | 4 Gbit |
| Interface Type | Parallel | Parallel | Parallel |
| Organization | 128 M x 8 | 128 M x 8 | 512 M x 8 |
| Data Bus Width | 8 bit | 8 bit | 8 bit |
| Supply Voltage Min | 1.7 V | 1.7 V | 2.7 V |
| Supply Voltage Max | 1.95 V | 1.95 V | 3.6 V |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
| Packaging | Tray | Tray | Tray |
| Memory Type | NAND | NAND | NAND |
| Brand | Toshiba Memory | Toshiba Memory | Toshiba Memory |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | NAND Flash | NAND Flash | NAND Flash |
| Factory Pack Quantity | 338 | 210 | 96 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Timing Type | - | Synchronous | - |
| Supply Current Max | - | 30 mA | 30 mA |
| Product | - | NAND Flash | - |
| Speed | - | 25 ns | - |
| Architecture | - | Block Erase | - |
| Maximum Clock Frequency | - | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Toshiba Memory |
TC58BYG2S0HBAI4 | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) | |
| TC58CVG1S3HRAIG | NAND Flash 3.3V 2Gb 24nm Serial NAND | ||
| TC58CVG0S3HRAIG | NAND Flash 3.3V 1Gb 24nm Serial NAND | ||
| TC58BYG1S3HBAI6 | NAND Flash 1.8V 2Gb 24nm I-Temp SLC NAND (EEPROM) | ||
| TC58BYG0S3HBAI6 | NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) | ||
| TC58BYG0S3HBAI4 | NAND Flash 1.8V 1Gb 24nm I-Temp SLC NAND (EEPROM) | ||
| TC58BYG1S3HBAI4 | NAND Flash 1.8V 2Gb 24nm I-Temp SLC NAND (EEPROM) | ||
| TC58BVG2S0HTAI0 | NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM) | ||
| TC58BYG2S0HBAI6 | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) | ||
| TC58BVG2S0HTA00B4H | EEPROM Serial 4G-bit 512M x 8 3.3V 48-Pin TSOP-I (Alt: TC58BVG2S0HTA00B4H) | ||
| TC58BVG2S3HTA00 | 신규 및 오리지널 | ||
| TC58BVG2SOFTA00 | 신규 및 오리지널 | ||
| TC58BVGOS3H | 신규 및 오리지널 | ||
| TC58BVGOS3HTA00 | 신규 및 오리지널 | ||
| TC58BVM92A5BAJ | 신규 및 오리지널 | ||
| TC58BYG0S3HAI6 | 신규 및 오리지널 | ||
| TC58BYG0S3HBAI4(JAH) | 신규 및 오리지널 | ||
| TC58BYG0S8EBAIA | 신규 및 오리지널 | ||
| TC58C1286AXB | 신규 및 오리지널 | ||
| TC58C1286AXG | 신규 및 오리지널 | ||
| TC58C1287AXB | 신규 및 오리지널 | ||
| TC58C128AFTI | 신규 및 오리지널 | ||
| TC58C256AFT | 신규 및 오리지널 | ||
| TC58C256AFTI | 신규 및 오리지널 | ||
| TC58C256AXB | 신규 및 오리지널 | ||
| TC58CV65FT | 신규 및 오리지널 | ||
| TC58CVG0S3HRAIG | SLC NAND with SPI Interface | ||
| TC58CVG0S3HRAIGBAH | 신규 및 오리지널 | ||
| TC58CVG1S3HQAIE | 2Gbit, generation: 24nm, VCC=2.7 to 3.6V - Trays (Alt: TC58CVG1S3HQAIE) | ||
| TC58CVG1S3HRAIG | SLC NAND with SPI Interface | ||
| TC58BYG1S3HBAI6 | IC FLASH 2G PARALLEL 67VFBGA Benand | ||
| TC58BYG2S0HBAI6 | IC FLASH 4G PARALLEL 67VFBGA Benand | ||
| TC58BVG2S0HTA00 | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | ||
| TC58BVG2S0HTAI0 | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | ||
| TC58BYG0S3HBAI6 | IC FLASH 1G PARALLEL 67VFBGA Benand | ||
| TC58BYG1S3HBAI4 | 2GB SLC NAND BGA 24NM I TEMP (EE Benand | ||
| TC58BYG0S3HBAI4 | 1GB SLC NAND BGA 24NM I TEMP (EE Benand | ||
| TC58BYG1S3HBAI4_REEL | SLC NAND Flash Serial 1.8V 2Gbit 256M x 8Bit 63-Pin TFBGA (Alt: TC58BYG1S3HBAI4) | ||
| TC58BVG2S0HTA00-ND | 신규 및 오리지널 | ||
| TC58BVG2S0HTAI0-ND | 신규 및 오리지널 | ||
| TC58BYG0S3HBAI4-ND | 신규 및 오리지널 | ||
| TC58BYG0S3HBAI6-ND | 신규 및 오리지널 | ||
| TC58BYG1S3HBAI4-ND | 신규 및 오리지널 | ||
| TC58BYG1S3HBAI6-ND | 신규 및 오리지널 | ||
| TC58BYG2S0HBAI4 | 4GB SLC BENAND 24NM BGA 9X11 (EE Benand | ||
| TC58BYG2S0HBAI4-ND | 신규 및 오리지널 | ||
| TC58BYG2S0HBAI6-ND | 신규 및 오리지널 | ||
| TC58CVG0S3HQAIE-ND | 신규 및 오리지널 | ||
| TC58CVG0S3HRAIG-ND | 신규 및 오리지널 | ||
| TC58CVG1S3HRAIG-ND | 신규 및 오리지널 |