NE35

NE3512S02-A vs NE3511S02-A vs NE3511S02-T1C-A

 
PartNumberNE3512S02-ANE3511S02-ANE3511S02-T1C-A
DescriptionRF JFET Transistors C to Ku Band Super Low Noise Amp N-ChRF JFET Transistors X to Ku Band Super Low Noise Amp N-ChRF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
ManufacturerCELCELCEL
Product CategoryRF JFET TransistorsTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
Transistor TypeHFETHFETHFET
TechnologyGaAsGaAsGaAs
Gain13.5 dB13.5 dB13.5 dB
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage4 V--
Vgs Gate Source Breakdown Voltage- 3 V--
Id Continuous Drain Current70 mA--
Maximum Operating Temperature+ 125 C+ 125 C+ 125 C
Pd Power Dissipation165 mW--
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseS0-2--
Operating Frequency12 GHz12 GHz12 GHz
ProductRF JFET--
TypeGaAs HFET--
BrandCEL--
Forward Transconductance Min55 mS--
Gate Source Cutoff Voltage4 V- 0.7 V-
NF Noise Figure0.35 dB--
Product TypeRF JFET Transistors--
Factory Pack Quantity1--
SubcategoryTransistors--
Package Case-S0-2S0-2
Pd Power Dissipation-165 mW165 mW
Id Continuous Drain Current-70 mA70 mA
Vds Drain Source Breakdown Voltage-4 V4 V
Forward Transconductance Min-65 mS65 mS
Vgs Gate Source Breakdown Voltage-- 3 V- 3 V
NF Noise Figure-0.3 dB0.3 dB
Packaging--Reel
제조사 부분 # 설명 RFQ
CEL
CEL
NE3520S03-T1C-A RF JFET Transistors 20GHz NF .65dB Ga=13.5dB
NE3515S02-T1C-A RF JFET Transistors Super Low Noise Pseudomorphic
NE3512S02-T1C-A RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
NE3512S02-A RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
NE3515S02-A RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
NE3515S02-T1D-A RF JFET Transistors Super Low Noise Pseudomorphic
NE3515S02-T1D-A RF JFET Transistors Super Low Noise Pseudomorphic
NE3514S02-T1C-A RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
NE3520S03-A RF JFET Transistors 20GHz NF .65dB Ga=13.5dB
NE3511S02-A RF JFET Transistors X to Ku Band Super Low Noise Amp N-Ch
NE3514S02-A RF JFET Transistors K Band Super Low Noise Amp N-Ch
NE3512S02-A RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
NE3515S02-A RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
NE3511S02-T1C-A RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
NE3515S02-T1C-A RF JFET Transistors Super Low Noise Pseudomorphic
NE3512S02-T1C-A RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
NE3513M04-T2-A FET RF 4V 12GHZ M04 4SMD
NE3513M04-T2B-A FET RF 4V 12GHZ M04 4SMD
NE3517S03-T1C-A Trans JFET N-CH 4V 70mA GaAs HJFET 4-Pin Case S-03 T/R
NE3514S02-T1C-A(K) RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET
NE3511S02A Trans JFET N-CH 4V 70mA 4-Pin Micro-X (Alt: NE3511S02A)
NE3514S02-T1B-A RF SMALL SIGNAL TRANSISTOR HFET
NE3514S02-T1D-A RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
NE3512S02-T1D-A RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
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