Alliance Memory's AS4C512M16D3L monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) features an 8 GB density 96-ball, 9 mm x 14 mm, lead (Pb)-free FBGA package. With minimal die shrinks, the single-die device provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, telecom, and aerospace applications, eliminating the need for costly redesigns and part requalification. This 8 GB DDR3L is a logical choice for applications that require increased memory yet face board space constraints.
Features and Benefits |
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- Offered in the 96-ball, 9 mm x 14 mm, lead (Pb)-free FBGA package
- State-of-the art silicon provided by Micron Technology
- Extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz
- Available in commercial extended (0°C to +95°C) and industrial (-40°C to +95°C) temperature ranges
- Internally configured as eight banks of 64 M x 16-bits (parameter 512 M x 16)
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- Operates from a single +1.35 V power supply
- Fully synchronous operation
- Programmable read or write burst lengths of 4 or 8
- Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
- Easy-to-use refresh functions include auto- or self-refresh
- Programmable mode register allows the system to choose the most suitable modes to maximize performance
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