Alliance Memory's high-speed mobile CMOS double data rate synchronous DRAMs (DDR SDRAM) are designed to increase efficiency and extend battery life in compact portable devices. Featuring low power consumption from 1.7 V to 1.95 V and a number of power-saving features, the 256 MB, 512 MB, 1 GB, and 2 GB devices are offered in 8 mm x 9 mm 60-ball and 8 mm x 13 mm 90-ball FPBGA packages. The AS4C16M16MD1, AS4C32M16MD1, AS4C16M32MD1, AS4C64M16MD1, AS4C32M32MD1, and AS4C64M32MD1 provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in high-bandwidth, high-performance memory system applications.
| Features and Benefits |
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- Low power consumption from 1.7 V to 1.95 V
- Power-saving features:
- Auto temperature compensated self-refresh (ATCSR)
- Partial array self-refresh (PASR)
- Deep power down (DPD) mode
- Double data rate architecture for fast clock rates of 166 MHz and 200 MHz
- Each device available in extended (-30°C to +85°C) and industrial (-40°C to +85°C) temperature ranges
- Internally configured as four banks of 16 M x 16-bits and 32-bits; 32 M and 64 M x 16-bits; and 32 M and 64 M x 32-bits
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- Offered in 8 mm x 9 mm 60-ball and 8 mm x 13 mm 90-ball FPBGA packages
- Fully synchronous operation
- Programmable read or write burst lengths of 2, 4, 8, or 16
- Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
- Easy-to-use refresh functions include auto- or self-refresh
- RoHS-compliant
- Lead (Pb)- and halogen-free
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